Innovative stacked busbar and capacitor structure design
Main testing circuit with stray inductance as low as 6nH
High-speed, high-frequency, high-reliability, and high common-mode transient immunity (CMTI) up to 200kV/μs
High-reliability production line design with 1200 UPH for half-bridge power module
Innovative solid-state protective switch with protection response <1μs
Ability to withstand short circuit currents up to 10kA. Worry-free to explore the limits
Test items: double pulse test, short circuit test
Double pulse current level: 4000A(depending on PEM test head measured range)
Maximum test voltage:Two-level 2000V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V) Three-level 1000V (BUS + to N.BUS- to N)
Maximum short circuit current tolerance: 10000A(Two-level)
Power module test conditions: Vdc: 50~2000V, ld: 5~4000A,Lload: 3/10/20/50/100/200uH
Drive voltage range: highest voltage+20V, lowest voltage-15V (voltage difference < 30V)
Test items: double pulse test, short circuit test
Double pulse current level: 1000A(depending on PEM test head measured range)
Maximum test voltage: 1500V
Maximum short circuit current tolerance: 3000A
Single device test conditions: Vdc: 50~1500V, ld: 5~1000A, Lload: 300uH (customized)
Drive voltage range: highest voltage+20V, lowest voltage-15V (voltage difference < 30V)
Best cost-efficiency
Stray inductance as low as 15nH
The main unit is fully compatible with different test heads, providing comprehensive testing coverage for all types of power devices
One machine covers all scenarios, from manually laboratory test to production lines
DUT types: SiC/IGBT discrete devices
Test range: double pulse test, short circuit test
Maximum voltage:1500V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)
Double pulse current level: 600A (depending on PEM test head measured range)
Maximum short circuit current tolerance: 3000A
Stray inductance:30±2nH (laboratory version),45±2nH (sorter versions TO247-3 and TO247-4)
DUT types: SiC MOSFET&IGBT (compatible with two level and three level power modules)
Test range:double pulse test, short circuit test
Maximum voltage:2000V(system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)
Double pulse current level: 4000A(depending on PEM test head measured range)
Maximum short circuit current tolerance: 10000A(Two-level)
Stray inductance: 15±2nH
Automated main equipment plus automated components. Support flexible line test
Two level/Three level
The production line version achieves ultra-low stray inductance: 15nH
Test items: double pulse test, short circuit test
Double pulse current level:4000A(depending on PEM test head measured range)
Maximum test voltage:2000V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)
Maximum test voltage: 10000A
Automation level: automated main equipment plus automated components
Can be integrated in production line
Packaging type: customized modules for different packaging
Test items: double pulse test
Double pulse current level:1500A (depending on PEM test head measured range)
Maximum test voltage: 1000V（BUS+and N，BUS-andN）
Automation level: automated main equipment plus automated components
Can be integrated in production line
Packaging type: customized modules for different packaging
